Atomic diffusion in the interface of Fe/Si prepared by magnetron sputtering
✍ Scribed by J. Zhang; Q. Xie; Y. Liang; W. Zeng; Q. Xiao; Q. Chen; V. Borjanović; M. Jakšić; M. Karlusic; B. Gržeta; K. Yamada; J. Luo
- Publisher
- Elsevier
- Year
- 2011
- Tongue
- English
- Weight
- 292 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1875-3892
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
In 2 O 3 :Sn (ITO) films were deposited on quartz substrates by direct current magnetron sputtering and annealed in N 2 at temperatures ranging from 150 to 350 • C for 1 h. The structure and morphology of the films were investigated by X-ray diffraction and atomic force microscopy. The results demon
Within the frame of this work, low temperature Ti-Si-C films were deposited on high-speed steel and stainless steel substrates by combined dc/rf magnetron co-sputtering. Composition analysis revealed the existence of two distinct regions: (i) a silicon doped sub-stoichiometric titanium carbide zone