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Assessment of AlGaN Growth by Plasma Assisted MBE Using In as a Surfactant

✍ Scribed by E. Monroy; B. Daudin; N. Gogneau; E. Bellet-Amalric; D. Jalabert; J. Brault

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 84 KB
Volume: 234
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200212)234:3<726::aid-pssb726>3.0.co;2-8

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✦ Synopsis

In this work, we evaluate the feasibility of In as a surfactant for AlGaN growth by plasma assisted molecular beam epitaxy. We have delimited the range of substrate temperatures and In fluxes in which an In adlayer is stable on Al x Ga 1--x N (0001). The presence of this In film modifies the growth kinetics, enabling 2D-growth of AlGaN at low temperature under stoichiometric and slightly N-rich conditions. Samples present mirror-like surfaces, with an average surface roughness of 5-10 A measured by AFM. The formation of metal droplets on the surface is inhibited. The high structural quality of the layers is demonstrated by high-resolution X-ray diffraction, both on symmetric and asymmetric reflections.

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