The change of the depth profile and chemical bond character of Ge in Ge Y ion-implanted SiO 2 layers during annealing in an O 2 atmosphere has been studied by x-ray photoelectron spectroscopy (XPS). The Ge depth profiles in as-implanted and annealed samples as measured by XPS are in agreement with p
Application of XPS and factor analysis for non-conducting materials
β Scribed by Oswald, S.; Baunack, S.
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 471 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0142-2421
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β¦ Synopsis
Data analysis with multivariate mathematical methods is commonly used more and more also for applications in electron spectroscopy. This paper concerns the use of factor analysis in x-ray photoelectron spectroscopy and is focused on the problems occurring during investigations of non-conducting materials. Possibilities of the correction of the charging e β ect are discussed, considering the aspects of background subtraction and spectra concatenation. The e β orts of the proposed procedures are demonstrated with model experiments and depth proΓle measurements.
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