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XPS investigation with factor analysis for the study of Ge clustering in SiO2

✍ Scribed by Oswald, S.; Schmidt, B.; Heinig, K.-H.

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
197 KB
Volume
29
Category
Article
ISSN
0142-2421

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✦ Synopsis

The change of the depth profile and chemical bond character of Ge in Ge Y ion-implanted SiO 2 layers during annealing in an O 2 atmosphere has been studied by x-ray photoelectron spectroscopy (XPS). The Ge depth profiles in as-implanted and annealed samples as measured by XPS are in agreement with profiles measured by Rutherford backscattering spectroscopy (RBS). At interfaces, XPS gives more information about the Ge depth distribution than RBS. Thus, other than RBS, XPS could prove that the fraction of implanted Ge, which moves during annealing to the SiO 2 /Si interface region, resides on the Si side of this interface. Additionally, the high-and low-contrast nanoclusters in Ge-implanted samples, which have been found recently in cross-section transmission electron microscopy images, could be identified by XPS, in combination with data analysis by factor analysis, to consist mainly of elemental Ge and GeO 2 , respectively.

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