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Application of silicon crystal orientation and anisotropic effects to the control of charge spreading in devices

✍ Scribed by Bean, K.E.; Lawson, J.R.

Book ID: 119797313
Publisher: IEEE
Year: 1974
Tongue: English
Weight: 970 KB
Volume: 9
Category: Article
ISSN: 0018-9200
DOI: 10.1109/jssc.1974.1050477

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## Abstract A SCF method using localized molecular orbitals which are built up on hybrid atomic orbitals is proposed to obtain the charges in infinite crystals. Hybrid orbitals are built up on a minimal STO basis set. The formalism has been adapted in order to take into account the periodicity of t