Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

✍ Scribed by van der Steen, J.-L.P.J.; Esseni, D.; Palestri, P.; Selmi, L.; Hueting, R.J.E.

• Book ID: 114618816
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 380 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.900417