The dependence of the etch rate uniformity across the wafer on the reactor design and various process parameters was investigated for the reactive ion etching (RIE) of silicon using pure sulphur hexafluoride (SF ). The experiments were 6 carried out in two different single wafer reactors without ion
β¦ LIBER β¦
Application of experimental and numerical simulation methods for studies of the dry groove silicon etching process
β Scribed by Galperin, V. A.
- Book ID
- 119884296
- Publisher
- Springer
- Year
- 2012
- Tongue
- English
- Weight
- 335 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1063-7397
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Process and equipment simulation of dry
β
T. Otto; H. Wolf; R. Streiter; A. Dehoff; K. Wandel; T. Gessner
π
Article
π
1999
π
Elsevier Science
π
English
β 689 KB
Numerical and experimental studies for t
β
Jen Fin Lin; Pal Jen Wei; Chih Kuang Tai; Jung Ching Chung
π
Article
π
2008
π
Elsevier Science
π
English
β 978 KB
Al catalyzed growth of silicon nanowires
β
Kohen, David ;Tileli, Vasiliki ;Cayron, Cyril ;Faucherand, Pascal ;Morin, Christ
π
Article
π
2011
π
John Wiley and Sons
π
English
β 534 KB
## Abstract Aluminumβcatalyzed epitaxial growth of silicon nanowire (SiNW) arrays was performed on Si wafer by chemical vapor deposition at 600βΒ°C. The arrays showed a low optical total reflectance in the visible light spectrum, with a minimum of 2% around 450βnm wavelength. Following SiNW growth,
A combination of electroless and electro
β
N. Naderi; M.R. Hashim
π
Article
π
2012
π
Elsevier Science
π
English
β 726 KB
A method for the analysis and control of
β
C Curt; G Trystram; H Nogueira-Terrones; J Hossenlopp
π
Article
π
2004
π
Elsevier Science
π
English
β 309 KB
Numerical and experimental simulation st
β
L.T. Fan; F.S. Lai; Y. Akao; K. Shinoda; E. Yoshizawa
π
Article
π
1978
π
Elsevier Science
π
English
β 991 KB