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Application of capacitance-voltage measurements to the determination of interface roughness in nanoparticulate field-effect transistors

✍ Scribed by Okamura, Koshi ;Nikolova, Donna ;Mechau, Norman ;Hahn, Horst

Book ID
105365862
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
383 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Solution‐processed inorganic field‐effect transistors (FETs) are mostly composed of nanocrystalline semiconductors as active layers. Since carriers are induced at the interface between the nanocrystalline semiconductor and the dielectric, the roughness at the interface has a significant influence on the performance of the FETs. The interface is, however, buried in the nanocrystalline layer and cannot be accessed from the surface; no quantitative probing methods are available so far. In this article, it is proposed to apply capacitance–voltage (C–V) measurements on nanoparticulate capacitors to examine the interface roughness, which enables us to evaluate the correlation between the interface roughness and the performance of nanoparticulate zinc oxide (ZnO) FETs.

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