Correlation between Si diffusion and Si-
β
Hisao Nakashima; Junji Kobayashi; Toshiaki Fukunaga; Kazunori Matsui; Kohji Ishi
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Article
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1986
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Elsevier Science
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English
β 241 KB
Compositional disordering of AIGaAs superlattices induced by Si ion implantation and subsequent annealing has been studied by secondary ion mass spectrometry (SIMS). Distinct correlation is found between the induced disordering and the rapid Si diffusion which occurs above the critical concentratio