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Anomalous degradation of MOS structures in substrate hot electron injection experiments

✍ Scribed by Tomasz Brożzek; Daniel Hahn; Chand R. Viswanathan


Book ID
103599424
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
381 KB
Volume
28
Category
Article
ISSN
0167-9317

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Oxide thickness dependence of hole trap
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Hole trapping in the gate oxide of MOS devices causes instabilities of device parameters and serious reliability problems in MOS transistors and memories. In this work, hole traps, generated by high-field electron injection, are studied in thermal oxides in the thickness range below 10 nm. PMOS tran