✦ LIBER ✦
Study of hot electron degradation in submicrometer gate length MOS transistor fabricated with selectively doped substrate engineering
✍ Scribed by P.N. Andhare; R.K. Nahar; S. Chandra
- Book ID
- 103286022
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 315 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0026-2714
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