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Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

✍ Scribed by Gorczyca, I.; Kamińska, A.; Staszczak, G.; Czernecki, R.; Łepkowski, S. P.; Suski, T.; Schenk, H. P. D.; Glauser, M.; Butté, R.; Carlin, J.-F.; Feltin, E.; Grandjean, N.; Christensen, N. E.; Svane, A.

Book ID: 121440668
Publisher: The American Physical Society
Year: 2010
Tongue: English
Weight: 374 KB
Volume: 81
Category: Article
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.81.235206

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## Abstract Using __ab initio__ calculations a comparison between In~__x__~Ga~1−__x__~N, In~__x__~Al~1−__x__~N and Ga~__x__~Al~1−__x__~N is performed to examine the role of indium in nitride alloys. The band gap, __E__~g~, as well as its pressure coefficient, d__E__~g~/d__p__, are studied as functi