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Atomistic Origin and Pressure Dependence of Band Gap Variation in Semiconductor Nanocrystals

โœ Scribed by Ouyang, G.; Sun, C. Q.; Zhu, W. G.


Book ID
126305816
Publisher
American Chemical Society
Year
2009
Tongue
English
Weight
143 KB
Volume
113
Category
Article
ISSN
1932-7447

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Pressure Dependence of Band Gaps and Dee
โœ In-Hwan Choi; Peter Y. Yu ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 302 KB ๐Ÿ‘ 2 views

We present a review of the effect of high pressure on the electronic, optical and defect properties in chalcopyrite semiconductors with the formula IยฑIIIยฑVI 2 . We show that the linear pressure coefficients of the band gap in these materials are not constant. While the bulk moduli of this family of