๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Annealing of silicon implanted with arsine and hydrogen ions

โœ Scribed by Yokota, Katsuhiro ;Nakase, Shuusaku ;Nakamura, Kazuhiro ;Tannjou, Masayasu ;Matsuda, Kouji ;Takano, Hiromichi


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
81 KB
Volume
195
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Annealing Stages of Implanted Silicon
โœ Hlรกvka, J. ;Grลˆo, J. ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 188 KB
Microstructure evolution of hydrogen-imp
โœ Jing Wang; Qinghua Xiao; Hailing Tu; Beiling Shao; Ansheng Liu ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 795 KB

The microstructure evolution of a hydrogen-implanted Si(111) wafer during annealing was studied using transmission electron microscopy (TEM). In the damaged layer caused by hydrogen implantation before annealing, most defects are platelet-like and are located on (111) planes. A few amorphous clumps

Defect production and annealing in ion i
โœ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron