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Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect Complex

✍ Scribed by Pandey, K.; Erbil, A.; Cargill, G.; Boehme, R.; Vanderbilt, David

Book ID: 111867302
Publisher: The American Physical Society
Year: 1988
Tongue: English
Weight: 159 KB
Volume: 61
Category: Article
ISSN: 0031-9007
DOI: 10.1103/physrevlett.61.1282

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