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A study of the annealing of heavily arsenic-doped silicon using x-ray photoelectron spectroscopy

✍ Scribed by Lau, W. M.; Feng, Xinghong; Kumar, S. N.

Book ID: 120591602
Publisher: American Institute of Physics
Year: 1990
Tongue: English
Weight: 776 KB
Volume: 67
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.345029

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