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Annealing effects on the electrical properties of Hg1−xCdxTe grown by two different techniques

✍ Scribed by Hady, A. A. A.

Publisher: John Wiley and Sons
Year: 1988
Tongue: English
Weight: 135 KB
Volume: 107
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211070152

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## Abstract InN thin films grown by MOVPE with a thickness of about 100 nm are investigated. Growth was carried out in either two or three steps: deposition of a low temperature nucleation layer at 400 °C and subse‐ quent growth of a thicker InN layer at 530 °C, or use of a GaN buffer layer which w