Annealing effects on individual loss mechanisms in CuInSe2 solar cells
โ Scribed by R.A. Sasala; J.R. Sites
- Publisher
- Elsevier Science
- Year
- 1991
- Weight
- 368 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0379-6787
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โฆ Synopsis
Detailed measurements were made on CuInSe2 solar cells following thermal anneals in air at progressively higher temperatures. For evaporated cells there is an initial improvement in many of the individual measured parameters. The common explanation is a decrease in compensating defect states. After higher temperature anneals, however, compensating state densities show a dramatic rise, resulting in large forward currents and small photocurrents, which effectively terminate the photovoltaic response.
๐ SIMILAR VOLUMES
This paper reports on the first successful measurements of deep levels in CuInSe2 by deep level transient spectroscopy (DLTS) on 9% efficient CdS/CuInSe2 solar cells. The results indicate the presence in the p-type CuInSe2 films with a carrier concentration of 1 X 10 is cm -3 of a hole trap of conce