Effect of a thin intermediate zinc selenide layer on the properties of CuInSe2 solar cells
โ Scribed by Ji-Beom Yoo; Alan L. Fahrenbruch; Richard H. Bube
- Publisher
- Elsevier Science
- Year
- 1991
- Weight
- 510 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0379-6787
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The electrical characteristics of CuInSe 2 thin films and CdS/CuInSe 2 devices have been shown to be controlled by the stoichiometry. Off-stoichiometric films that are employed in the device (i.e. copper-poor and seleniumpoor compositions) are rich in native defects such as Vcu (acceptor), Incu and
PolycrystaUine thin films of CuInSe2 and CuGaSe2 deposited by thermal evaporation onto heated substrates of 7059 glass and A1203 were studied by electron microprobe analysis, X-ray diffractometry, Hall effect and van der Pauw measurements, and spectrophotometry in the near-infrared and visible range