✦ LIBER ✦

Analytical modeling of quantum threshold voltage for triple gate MOSFET

✍ Scribed by P. Rakesh Kumar; Santanu Mahapatra

Book ID: 108271822
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 615 KB
Volume: 54
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.07.013

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Analytical threshold voltage model for l

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

✍ A. Tsormpatzoglou; D.H. Tassis; C.A. Dimitriadis; G. Ghibaudo; N. Collaert; G. P 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 348 KB

An analytical threshold voltage model fo

An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET

✍ Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R.S. Gupta 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 242 KB

An analytic model for threshold voltage

An analytic model for threshold voltage shift due to quantum confinement in surrounding gate MOSFETs with anisotropic effective mass

✍ Yu Yuan; Bo Yu; Jooyoung Song; Yuan Taur 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 550 KB

A 3D analytical model for threshold volt

A 3D analytical model for threshold voltage of small-geometry MOSFET

✍ Arti Noor; Chandra Shekhar 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 585 KB

A new boron implantation model suitable

A new boron implantation model suitable for analytical modeling of threshold voltage of MOSFETs

✍ A.Das Gupta; S.K. Lahiri 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 482 KB

Analytical model for threshold voltage a

Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

✍ Abhinav Kranti; S. Haldar; R.S. Gupta 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 417 KB

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m