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An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET

โœ Scribed by Harsupreet Kaur; Sneha Kabra; Subhasis Haldar; R.S. Gupta

Book ID
108271617
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
242 KB
Volume
52
Category
Article
ISSN
0038-1101

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Analytical model for threshold voltage a
Analytical model for threshold voltage and Iโ€“V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET
โœ Abhinav Kranti; S. Haldar; R.S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 417 KB

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m