Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high- k dielectrics for nanoscale double-gate MOSFETs

✍ Scribed by Darbandy, Ghader; Ritzenthaler, Romain; Lime, François; Garduño, Ivan; Estrada, Magali; Cerdeira, Antonio; Iñiguez, Benjamin

• Book ID: 127294273
• Publisher: Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 572 KB
• Volume: 26
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/26/4/045002