Analytical model for the high-temperature behaviour of the subthreshold slope in MuGFETs

✍ Scribed by Chi-Woo Lee; Dimitri Lederer; Aryan Afzalian; Ran Yan; Nima Dehdashti Akhavan; Jean-Pierre Colinge

• Book ID: 104052265
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 524 KB
• Volume: 86
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.01.061

✦ Synopsis

As MuGFETs are promising contenders for the end of the silicon Roadmap, their high-temperature behaviour needs to be addressed. In this work we investigate the variations of the subthreshold slope (SS) of double-gate devices and MuGFETs with intrinsic doping as a function of the temperature and fin width. Focus is placed on the superlinear behaviour of SS occurring above a certain temperature threshold. Numerical simulations are performed using Comsol Multiphysics TM and a 1D analytical model is developed. The model, which includes the effect of film and gate oxide thickness, is shown to accurately fit the numerical data. A new definition for the subthreshold slope under high-temperature operation is proposed. The high-temperature subthreshold slope degradation is shown to increase with fin width.