Analytical model for the high-temperatur
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Chi-Woo Lee; Dimitri Lederer; Aryan Afzalian; Ran Yan; Nima Dehdashti Akhavan; J
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Article
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2009
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Elsevier Science
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English
β 524 KB
As MuGFETs are promising contenders for the end of the silicon Roadmap, their high-temperature behaviour needs to be addressed. In this work we investigate the variations of the subthreshold slope (SS) of double-gate devices and MuGFETs with intrinsic doping as a function of the temperature and fin