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High-Temperature Analyticity of the Widom-Rowlinson Model with Finite Repulsion

โœ Scribed by Runnels, L. K.; Freasier, B. C.

Book ID
120603473
Publisher
The American Physical Society
Year
1973
Tongue
English
Weight
130 KB
Volume
8
Category
Article
ISSN
1050-2947

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As MuGFETs are promising contenders for the end of the silicon Roadmap, their high-temperature behaviour needs to be addressed. In this work we investigate the variations of the subthreshold slope (SS) of double-gate devices and MuGFETs with intrinsic doping as a function of the temperature and fin