๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs

โœ Scribed by Yoshimi, M.; Takahashi, M.; Wada, T.; Kato, K.; Kambayashi, S.; Kemmochi, M.; Natori, K.


Book ID
114536838
Publisher
IEEE
Year
1990
Tongue
English
Weight
783 KB
Volume
37
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES