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Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET's as a function of temperature

✍ Scribed by Balestra, F.; Jomaah, J.; Ghibaudo, G.; Faynot, O.; Auberton-Herve, A.J.; Giffard, B.

Book ID: 114535574
Publisher: IEEE
Year: 1994
Tongue: English
Weight: 388 KB
Volume: 41
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.259627

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