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Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs

✍ Scribed by Mitani, Y.; Kasai, D.; Horio, K.

Book ID: 114617003
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 754 KB
Volume: 50
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2003.809039

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