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Analysis of Strain Depth Variations in an In0.19Ga0.81N Layer by Raman Spectroscopy

โœ Scribed by M.R. Correia; S. Pereira; J. Frandon; M.A. Renucci; E. Alves; A.D. Sequeira; N. Franco

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
227 KB
Volume
0
Category
Article
ISSN
1862-6351

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โœ Tian, Yuan ;Zhang, Baolin ;Zhou, Tianming ;Jiang, Hong ;Jin, Yixin ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 393 KB ๐Ÿ‘ 2 views

In this paper, the performance is analyzed for the P 1 ยฑp 2 ยฑn and N 1 ยฑn 2 ยฑp hetero-and homojunction GaSb/Ga 0.8 In 0.2 As 0.19 Sb 0.81 photodetectors operated at 300 K, based on the incident wavelength and the parameters of GaSb and Ga 0.8 In 0.2 As 0.19 Sb 0.81 . The analyzed results show that t