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Analysis of Options in Double-Gate MOS Technology: A Circuit Perspective

✍ Scribed by Cakici, R.T.; Roy, K.

Book ID
114619011
Publisher
IEEE
Year
2007
Tongue
English
Weight
621 KB
Volume
54
Category
Article
ISSN
0018-9383

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## Abstract Recently we developed a model for symmetric double‐gate MOSFETs (SDDGM) that, for the first time, considers the doping concentration in the Si film in the complete range from 1Γ—10^14^ to 3Γ—10^18^ cm^βˆ’3^. The model covers a wide range of technological parameters and includes short channe