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Analysis of MBE grown AI(x)Ga(1-x)As-GaAs heteroepitaxial layers by rutherford backscattering

✍ Scribed by F. A. Baiocchi; T. Ambrose; R. O. Miller; S. Nakahara; J. M. Brown; C. L. Reynolds; S. E. Lengle; L. J. Peticolas

Book ID: 112816323
Publisher: Springer US
Year: 1990
Tongue: English
Weight: 694 KB
Volume: 19
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02657999

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