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Electroreflectance studies of InAs quantum dots with In[sub x]Ga[sub 1âx]As capping layer grown by metalorganic chemical vapor deposition

✍ Scribed by Chang, W.-H.; Chen, Hsiang-Yu; Chang, H.-S.; Chen, W.-Y.; Hsu, T. M.; Hsieh, T.-P.; Chyi, J.-I.; Yeh, N.-T.

Book ID: 121011238
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 424 KB
Volume: 86
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1894613

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Electroreflectance studies of InAs quantum dots with In[sub x]Ga[sub 1âx]As capping layer grown by metalorganic chemical vapor deposition

Electroreflectance studies of InAs quantum dots with In[sub x]Ga[sub 1âx]As capping layer grown by metalorganic chemical vapor deposition