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Band gap discontinuity in Ga[sub 0.9]In[sub 0.1]N[sub 0.027]As[sub 0.973âx]Sb[sub x]âGaAs single quantum wells with 0â¤x<0.06 studied by contactless electroreflectance spectroscopy

✍ Scribed by Kudrawiec, R.; Motyka, M.; Gladysiewicz, M.; Misiewicz, J.; Yuen, H. B.; Bank, S. R.; Bae, H.; Wistey, M. A.; Harris, James S.

Book ID: 120017671
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 415 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2208949

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Band gap discontinuity in Ga[sub 0.9]In[sub 0.1]N[sub 0.027]As[sub 0.973âx]Sb[sub x]âGaAs single quantum wells with 0â¤x<0.06 studied by contactless electroreflectance spectroscopy

Band gap discontinuity in Ga[sub 0.9]In[sub 0.1]N[sub 0.027]As[sub 0.973âx]Sb[sub x]âGaAs single quantum wells with 0â¤x<0.06 studied by contactless electroreflectance spectroscopy