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Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

✍ Scribed by Ş. Karataş; Ş. Altındal


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
331 KB
Volume
122
Category
Article
ISSN
0921-5107

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## Abstract The current voltage characteristics of In / Cu with n‐type MoSe~2~ Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe~2~ shows ohmic behavior after annealing the contact at 100 °C for 12 h. The ohmic nature was retained at all