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Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

โœ Scribed by Chini, A.; Di Lecce, V.; Fantini, F.; Meneghesso, G.; Zanoni, E.


Book ID
114620939
Publisher
IEEE
Year
2012
Tongue
English
Weight
934 KB
Volume
59
Category
Article
ISSN
0018-9383

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## Abstract The large signal time domain simulation of the 40 GHz oneโ€stage amplifier with the AlGaN/GaNโ€HEMT is performed by means of the coupled physical deviceโ€circuit simulation, in which the Monte Carlo (MC) device simulator is incorporated into the embedding circuit as a realistic physicsโ€bas