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Analysis of charge control in pseudomorphic two-dimensional electron gas field-effect transistors

✍ Scribed by Ando, Y.; Itoh, T.


Book ID
114538361
Publisher
IEEE
Year
1988
Tongue
English
Weight
749 KB
Volume
35
Category
Article
ISSN
0018-9383

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Quasi-two-dimensional simulation of dual
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A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The