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Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

โœ Scribed by Chopra, Saurabh; Ozturk, Mehmet C.; Misra, Veena; McGuire, Kris; McNeil, Laurie E.

Book ID
121457910
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
258 KB
Volume
88
Category
Article
ISSN
0003-6951

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Tensile strained Si (sSi) layers were epitaxially deposited onto fully relaxed Si 0.78 Ge 0.22 (SiGe) epitaxial layers (4 m) on silicon substrates. Periodic arrays of 150 nm ร— 150 nm and 150 nm ร— 750 nm pillars with a height of 100 nm were fabricated into the sSi and SiGe layers by electronbeam lith