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Analysis and modelling of parasitic substrate coupling in CMOS circuits

✍ Scribed by Aragones, X.; Moll, F.; Roca, M.; Rubio, A.

Book ID
114447496
Publisher
The Institution of Electrical Engineers
Year
1995
Tongue
English
Weight
674 KB
Volume
142
Category
Article
ISSN
1350-2409

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## Abstract In the mesoscopic regime, the MOS device performance is affected by gate‐induced quantization effects leading to a loss of transconductance and threshold voltage shift and gate leakage tunnelling currents degrading the overall device performance. We discuss the expected impact of quantu