An X-ray photoelectron spectroscopy study of chemically etched GaAs
β Scribed by P. Alnot; F. Wyczisk; A. Friederich
- Publisher
- Elsevier Science
- Year
- 1985
- Weight
- 47 KB
- Volume
- 162
- Category
- Article
- ISSN
- 0167-2584
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X-ray photoelecrron spectroscopy (;xPS) las been used :O study the estemal layers of some zeolitc surfaces. It has been shown that the (SijAl) ratio of the external surf== is rou&ly twi= that of the bulk. The Ce'+ oxidation ofcerium exchansd Y zeoiite has been studied, and cerium diotide formation i
## Abstract We carried out nondestructive measurements of the depth profile of etchingβinduced damage in pβtype gallium nitride (pβGaN), in particular surface band bending, using Hard Xβray Photoelectron Spectroscopy (HAXβPES). HAXβPES at different takeβoff angles of photoelectrons made it clear th