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An overview of the ion beam mixing rates in Pd/Si bilayers versus the temperature and deposited energy

✍ Scribed by Judith Desimoni; Agnès Traverse; Marie-Gabrielle Medici

Book ID
113282708
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
449 KB
Volume
72
Category
Article
ISSN
0168-583X

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Accelerated-ion beam doping during Si growth by molecular beam epitaxy and ion-enhanced In film deposition using a low-energy (40–300 eV) In ion source: M-A Hasan J Knall SA Barnett, Department of Physics, Linköping University, S-58183 Linköping, Sweden and J-E Sundgren, A Rockett and JE Greene, Department of Mettalurgy, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA
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