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An optimal neural network process model for plasma etching

✍ Scribed by Byungwhan Kim, ; May, G.S.


Book ID
125472128
Publisher
IEEE
Year
1994
Tongue
English
Weight
977 KB
Volume
7
Category
Article
ISSN
0894-6507

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Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua