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An operational definition for breakdown of thin thermal oxides of silicon

โœ Scribed by Heimann, P.A.


Book ID
111916234
Publisher
IEEE
Year
1983
Tongue
English
Weight
311 KB
Volume
30
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES


Kinetics of thermal growth of thin silic
โœ G.C. Sarti; F. Santarelli; G. Camera Roda ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 727 KB

thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order