An investigation of the anisotropic etching of (100) silicon using cesium hydroxide
โ Scribed by J.D.Ip Yam; J.J. Santiago-Aviles; J.N. Zemel
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 546 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0924-4247
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
The resistance of PECVD SiN films to dry etching is increased by more than three orders of magnitude by exposure to an oxygen plasma. In this paper we describe the oxygen treatment. Both the film thickness and the refractive index are modified by the oxygen treatment suggesting a homogenous densific
Existing permanganic etching techniques have been adapted for an aliphatic polyketone terpolymer to examine its spherulitic and lamellar morphology by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). A spherulitic morphology was observed consisting of irregularly shaped