Interface and oxide properties of rf spu
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T Dimitrova; E Atanassova
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Article
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1998
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Elsevier Science
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English
โ 201 KB
Interface and oxide properties of Ta 2 O 5 -Si structures with rf sputtered Ta 2 O 5 of 7-80 nm thickness have been investigated using capacitors on p-Si and transistor-like test structures. It is found tha the electrical properties of the films are dominated by an extremely thin SiO 2 layer which i