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An investigation of Si-SiO2and Si-Ta2O5interfaces prepared by reactive sputtering

โœ Scribed by Akiyama, K.; Ishihara, T.; Takemoto, T.; Terui, Y.


Book ID
114589031
Publisher
IEEE
Year
1966
Tongue
English
Weight
203 KB
Volume
ED-13
Category
Article
ISSN
0018-9383

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Interface and oxide properties of Ta 2 O 5 -Si structures with rf sputtered Ta 2 O 5 of 7-80 nm thickness have been investigated using capacitors on p-Si and transistor-like test structures. It is found tha the electrical properties of the films are dominated by an extremely thin SiO 2 layer which i