An integrated silicon colour sensor using selective epitaxial growth

✍ Scribed by M. Bartek; P.T.J. Gennissen; P. Sarro; P.J. French; R.F. Wolffenbuttel

• Book ID: 103959658
• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 721 KB
• Volume: 41
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(94)80099-5

✦ Synopsis

An mtegrated s&on colour sensor usmg selecttve epltaxml growth (SEG) of sthcon IS presented l-he sensor concept IS based on the strong wavelength dependence of the photon absorption coefficient m sllrcon m the vlstble spectral range Photocurrents of three verttcally stacked photodmdes, wrth the desired posItton and tlnckness of the depletton regmns, represent full trtcolonmetrrc mformation The upper two photodmdes are mtegrated m the 1.2 w thxk SEG sthcon, whtch IS grown on the conventtonal epdayer where the lower photodlode IS placed High-quahty SEG silicon wrath pattern-msensltwe growth has been achieved Diodes formed III SEG &con show an tdeahty factor close to 1, provtded the edges are onented m the [lOOI duecttons l-he first prototypes of the colour sensor have been fabncuted, and measured spectral responses gwe reasonable agreement with stmulatton Usmg the SEG process together Hrlth low-temperature depostted masking oxide (TEOS), mamtams compahbbdlty v&h standard txpolar processmg and enables the integration of read-out clrcmtry to reahze a truly smart sensor