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An improved SPICE model for high-frequency noise of BJTs and HBTs

✍ Scribed by Zillmann, U.; Herzel, F.


Book ID
119774608
Publisher
IEEE
Year
1996
Tongue
English
Weight
359 KB
Volume
31
Category
Article
ISSN
0018-9200

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Analytical noise model of a high-electro
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## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient