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An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering

โœ Scribed by A. Sungthong; S. Porntheeraphat; A. Poyai; J. Nukeaw


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
980 KB
Volume
254
Category
Article
ISSN
0169-4332

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The N-doped b-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios (from 0% to 30%). The influence of ammonia partial pressure ratios and annealing treatment on the optical and structural properties were studied. The microstruc