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An Explicit Continuous Analytical Model for Gate All Around (GAA) MOSFETs Including the Hot-Carrier Degradation Effects

✍ Scribed by Abdi, M. A. (author);Djeffal, F. (author);Bentrcia, T. (author);Arar, D. (author)

Book ID: 125844217
Publisher: American Scientific Publishers
Year: 2011
Tongue: English
Weight: 405 KB
Volume: 11
Category: Article
ISSN: 1533-4880
DOI: 10.1166/jnn.2011.4290

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