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[IEEE 2008 3rd International Design and Test Workshop (IDT) - Monastir, Tunisia (2008.12.20-2008.12.22)] 2008 3rd International Design and Test Workshop - An analytical threshold voltage model for nanoscale GAA MOSFETs including effects of hot-carrier induced interface charges

โœ Scribed by Ghoggali, Z.; Djeffal, F.; Abdi, M. A.; Arar, D.; Lakhdar, N.; Bendib, T.


Book ID
126262733
Publisher
IEEE
Year
2008
Weight
952 KB
Category
Article
ISBN
1424434793

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