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An application of gold diffusion for defect investigation in silicon

✍ Scribed by O.V. Feklisova; E.B. Yakimov


Book ID
103887837
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
283 KB
Volume
404
Category
Article
ISSN
0921-4526

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Diffusion characteristics of gold in sil
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Low-resistivity n-type silicon has been doped with gold and characterised using Rutherford backscattering spectrometry and Hall effect measurements. Schottky barrier diodes were fabricated on silicon with no gold and on gold-doped silicon and then characterised using current-voltage and capacitance-